32GB DDR4 2666MHz Laptop RAM
by Samsung
- Capacity: 32GB
- Memory Type: DDR4 SDRAM
- Speed: 2666 MHz (PC4-21300)
- Form Factor: SODIMM (Small Outline DIMM)
- Latency: CL19
- Voltage: 1.2V
- Pins: 260-pin
- Error Checking: Non-ECC (Non-Error Correction Code)
- Rank: Single Rank or Dual Rank (varies by model)
- Module Configuration: 16G x 8 (Single Rank) or 32G x 8 (Dual Rank)
- Operating Temperature: 0°C to 85°C
- Compatibility: Compatible with laptops supporting DDR4 2666 MHz memory
- Dimensions: Approx. 67.6mm x 30mm
Model Number | 32GB DDR4 |
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SKU | 14723 |
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32GB DDR4 2666MHz Laptop RAM
The 32GB DDR4 2666MHz Laptop RAM is a high-capacity memory module designed to significantly enhance the performance of your laptop. With a generous 32GB of memory, this RAM is perfect for handling intensive computing tasks, such as video editing, large-scale data processing, and running multiple applications simultaneously.
Operating at a speed of 2666 MHz, this DDR4 RAM delivers fast data transfer rates and efficient performance, offering a substantial upgrade from older memory standards. The 260-pin SODIMM form factor ensures compatibility with a wide range of laptops that support DDR4 memory, making it a versatile choice for upgrading or building high-performance laptops.
Featuring a latency of CL19 and running at a low voltage of 1.2V, this RAM module provides a good balance of speed and energy efficiency, contributing to a cooler and more power-efficient laptop environment. The module may come in single-rank or dual-rank configurations, depending on the specific model, which can enhance memory bandwidth and overall performance.
Supporting Intel XMP (Extreme Memory Profile), this RAM allows for easy performance tuning and overclocking, enabling you to achieve higher speeds and stability with minimal effort. Its plug-and-play installation ensures a straightforward upgrade process, making it simple to boost your laptop’s memory capacity.
Capacity | 32 GB |
Kit Configuration | 2 x 16 GB |
Speed | PC4-21300 (2666 MHz) |
Memory Type | DDR4 |
DIMM Type | 260-Pin SO-DIMM |
Buffered/Registered | No |
Error Correction (ECC) | Non-ECC |
Voltage | 1.2 V |
CAS Latency | CL19 |